Nitrogen implantation into graphene oxide and reduced graphene oxides using radio frequency plasma treatment in microscale

Solvent-free radiofrequency (RF) nitrogen plasma treatment was applied to incorporate atoms in relatively high concentration. Graphene oxide (GO) and two reduced GOs of different O-content were used as target substrates reveal the influence functional groups decorating graphene lattice on quantity quality incorporation. Despite oxygen content samples no N–O bonds develop but three kinds N–C very similar concentration are formed. Reduction GO removed O-groups did not heal vacancies where N doping may occur. After days implanted drops, N1 state (sp2 pyridine ring, C–N–C) showing least stability.